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● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
General Description
The FDN337N N-Channel Enhancement MOSFET, presented in a compact SOT-23 package, is designed for high-efficiency switching and control in various electronic applications. Its excellent performance metrics, including low on-resistance and substantial drain current capability, make it a versatile component for power management and signal switching.
Features
● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
Applications
● Battery protection
● Load switch
● Power management
| File Name | Title | Description |
|---|---|---|
| FDN337N SOT-23.pdf | FDN337N SOT-23 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Fast Switching Low ON Resistance Low Gate Charge
This N-Channel MOSFET features ultra-low voltage drive (1.2V), comes in a small SOT723 package, and is Pb-free and RoHS compliant for efficient, reliable performance.
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
● Advanced Trench Technology ● Provide Excellent RDS(ON) and Low Gate Charge ● Lead free product is acquired
● Low voltage drive makes this device ideal for portable equipment ● Easily designed drive circuits ● Easy to parallel
Type : P-Channel Vdss: 50V Id: 130mA Pd: 200mW RDS(on)@Vgs,Id: 10Ω@5V,100mA Vgs(th)@Id: 2.5V@250uA Ciss@Vds : 73pF@25V Working Temperature: +150℃@(Tj)
High voltage, low on-resistance High-speed, low parasitic capacitance High operating junction temperature
This N-Channel MOSFET offers 30V Vds, 2.2A Id, and 0.5W Pd, featuring Trench Power LV technology and high-speed switching for efficient, low-power operation.
