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TIP32C Silicon Epitaxial Planar Transistor
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Description
With TO-220 package
Complement to type TlP31/31A/31B/31C
Applications
Medium power linear and switching applications
| File Name | Title | Description |
|---|---|---|
| TIP32C TO-220.pdf | TIP32C TO-220 | - |
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65 V, 100 mA NPN general-purpose transistors in a small SOT23 Surface-Mounted Device (SMD) plastic package.
Alternative equivalent for Nexperia BC846B | Slkor BC846B NPN Silicon Epitaxial Planar Transistor
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The 2SD1898-R is an epitaxial silicon NPN transistor engineered for applications requiring reliable switching and amplification in electronic circuits. Packaged in a TO-220F format, this transistor boasts a maximum collector-emitter voltage (Vceo) of 80V and can handle a continuous collector current (Ic) of 1A. With a power dissipation (Pd) capability of 2W, the 2SD1898-R ensures robust performance under varying load conditions. Featuring an ultra-low collector cut-off current (Icbo) of 1μA and a low saturation voltage (VCE(sat)) of 150mV at 500mA collector current and 50mA base current, it offers efficient operation with minimal power loss.
The FMMT489 is an epitaxial silicon transistor designed for high-performance applications requiring robustness and efficiency in small electronic circuits. Encapsulated in a compact SOT-23 package, this transistor offers a maximum collector-emitter voltage (Vceo) of 30V and can handle a continuous collector current (Ic) of up to 1A. With a power dissipation (Pd) rating of 500mW, it effectively manages heat dissipation in various operational conditions. The FMMT489 features a low saturation voltage (VCE(sat)) of 300mV at 1A collector current and 100mA base current, ensuring minimal power loss during switching operations. It boasts a high DC current gain (hFE) of 100 at 1A collector current and 2V collector-emitter voltage (Vce), facilitating reliable signal amplification and control.
