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The 2SD1898-R is an epitaxial silicon NPN transistor engineered for applications requiring reliable switching and amplification in electronic circuits. Packaged in a TO-220F format, this transistor boasts a maximum collector-emitter voltage (Vceo) of 80V and can handle a continuous collector current (Ic) of 1A. With a power dissipation (Pd) capability of 2W, the 2SD1898-R ensures robust performance under varying load conditions. Featuring an ultra-low collector cut-off current (Icbo) of 1μA and a low saturation voltage (VCE(sat)) of 150mV at 500mA collector current and 50mA base current, it offers efficient operation with minimal power loss.
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Description:
The 2SD1898-R is an epitaxial silicon NPN transistor engineered for applications requiring reliable switching and amplification in electronic circuits. Packaged in a TO-220F format, this transistor boasts a maximum collector-emitter voltage (Vceo) of 80V and can handle a continuous collector current (Ic) of 1A. With a power dissipation (Pd) capability of 2W, the 2SD1898-R ensures robust performance under varying load conditions. Featuring an ultra-low collector cut-off current (Icbo) of 1μA and a low saturation voltage (VCE(sat)) of 150mV at 500mA collector current and 50mA base current, it offers efficient operation with minimal power loss.
Features:
● High VCEO, VCEO=80V
● High IC, IC=1A (DC)
● Low VCE (sat)
● Complementary to 2SB1260
Applications:
The 2SD1898-R transistor is suitable for a wide range of applications:
| File Name | Title | Description |
|---|---|---|
| 2SD1898-R SOT-89.pdf | 2SD1898-R SOT-89 | - |
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The 2SD1624-T is a robust epitaxial silicon NPN transistor designed for high-current and high-frequency applications. Encapsulated in a TO-252 (DPAK) package, this transistor offers reliable performance with a maximum collector-emitter voltage (Vceo) of 50V and a maximum continuous collector current (Ic) of 3A. With a power dissipation (Pd) rating of 0.5W, the 2SD1624-T can efficiently handle moderate power levels. It features a high transition frequency (fT) of 150MHz, making it suitable for applications requiring fast switching and precise amplification.
B772 PNP Epitaxial Silicon Transistor in Surface-Mounted Device (SMD) plastic package.
The FMMT489 is an epitaxial silicon transistor designed for high-performance applications requiring robustness and efficiency in small electronic circuits. Encapsulated in a compact SOT-23 package, this transistor offers a maximum collector-emitter voltage (Vceo) of 30V and can handle a continuous collector current (Ic) of up to 1A. With a power dissipation (Pd) rating of 500mW, it effectively manages heat dissipation in various operational conditions. The FMMT489 features a low saturation voltage (VCE(sat)) of 300mV at 1A collector current and 100mA base current, ensuring minimal power loss during switching operations. It boasts a high DC current gain (hFE) of 100 at 1A collector current and 2V collector-emitter voltage (Vce), facilitating reliable signal amplification and control.
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65 V, 100 mA NPN general-purpose transistors in a small SOT23 Surface-Mounted Device (SMD) plastic package.
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