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Alternative equivalent for Nexperia BC846B | Slkor BC846B NPN Silicon Epitaxial Planar Transistor
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Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
Slkor alternative equivalents to Nexperia.
| Nexperia | Slkor Replacements | ||
| Part Number | Part Number | Product Category | Package |
| 74HC573D,653 | 74HC573D | Register | SOP-20 |
| BC846B | BC846B | Transister | SOT-23 |
| BCX52-16,115 | BCX52-16 | Transister | SOT-89 |
| BCP51-16,115 | BCP51-16 | Transister | SOT-223 |
Description
NPN general-purpose transistors in a small SOT-23 Surface-Mounted Device (SMD) plastic package.
Features
● General-purpose transistors
● SMD plastic package
● Two different gain selections
Applications
● General-purpose switching and amplification
Quick reference data
|
Symbol |
Parameter |
Conditions |
Max |
Unit |
|
VCEO |
collector-emitter voltage |
open base |
65 |
V |
|
IC |
collector current |
0.1 |
A |
|
|
VCEsat |
collector-emitter saturation voltage |
IC = 100mA; IB = 5mA |
0.6 |
V |
| File Name | Title | Description |
|---|---|---|
| BC846B.pdf | BC846B | - |
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65 V, 100 mA NPN general-purpose transistors in a small SOT23 Surface-Mounted Device (SMD) plastic package.
Alternative equivalent for STMicroelectronics MMBT5401 | Slkor MMBT5401 PNP Epitaxial Silicon Transistor
The BCP51-16 is a high-performance PNP bipolar junction transistor designed for efficient switching and amplification in a variety of electronic applications. With a collector-emitter voltage rating (Vceo) of 45V and a maximum collector current (Ic) of 1A, it offers robust performance in a compact package. This transistor is engineered to handle up to 1.5W of power dissipation, ensuring reliability under varying operational conditions.
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