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The BCP53-16 is a versatile PNP bipolar junction transistor renowned for its robustness and efficient performance in various electronic applications. With a maximum collector-emitter voltage (Vceo) of -80V and a collector current (Ic) rating of -1A, it offers reliable operation in circuits requiring substantial current handling capabilities. The transistor's power dissipation (Pd) of 1.5W and low collector-emitter saturation voltage (VCE(sat)) of -0.5V @ -500mA, -50mA ensure efficient switching and amplification.
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Description:
The BCP53-16 is a versatile PNP bipolar junction transistor renowned for its robustness and efficient performance in various electronic applications. With a maximum collector-emitter voltage (Vceo) of -80V and a collector current (Ic) rating of -1A, it offers reliable operation in circuits requiring substantial current handling capabilities. The transistor's power dissipation (Pd) of 1.5W and low collector-emitter saturation voltage (VCE(sat)) of -0.5V @ -500mA, -50mA ensure efficient switching and amplification.
Features:
● For AF driver and output stages
● High collector current
● Low collector-emitter saturation voltage
● Complementary types: BCP54...BCP56 (NPN)
Applications:
The BCP53-16 transistor finds application in a wide range of electronic circuits, including:
| File Name | Title | Description |
|---|---|---|
| BCP53-16_SOT-223.PDF | BCP53-16_SOT-223 | - |
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The BCP51-16 is a robust PNP bipolar junction transistor designed for high-current and low-power dissipation applications. With a maximum collector-emitter voltage (Vceo) of 45V and a collector current (Ic) rating of 1A, it offers efficient performance in compact electronic circuits. Its high power dissipation capability (Pd) of 1.5W and low collector-emitter saturation voltage (VCE(sat)) make it suitable for a wide range of switching and amplification tasks where reliability and efficiency are critical.
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Type：PNP Vceo: -25V Ic: -1.5A Pd: 1W VCE(sat)@Ic,Ib: -0.5V@-800mA,-80mA fT: 100MHz
Type：PNP Vceo: -25V Ic: -1.5A Pd: 1W VCE(sat)@Ic,Ib: -0.5V@-800mA,-80mA fT: 100MHz
Vceo:-160V Ic:-1A Pd:0.5W VCE(sat):-1.5V fT:15MHz Working temperature:150℃(Tj)
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