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The BC857CW is a versatile PNP digital transistor housed in a compact SOT-323 package. Designed for high-frequency switching applications, this transistor combines reliable performance with space-saving features. Its robust construction and efficient operation make it an ideal choice for various electronic circuits and systems.
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Description:
The BC857CW is a versatile PNP digital transistor housed in a compact SOT-323 package. Designed for high-frequency switching applications, this transistor combines reliable performance with space-saving features. Its robust construction and efficient operation make it an ideal choice for various electronic circuits and systems.
FEATURES
● Ideally suited for automatic insertion
● For Switching and AF Amplifier Applications
Application:
The BC857CW PNP digital transistor is ideal for a range of applications including:
● Switching Circuits: Used in digital circuits for switching operations due to its fast transition frequency and low saturation voltage.
● Amplifiers: Suitable for use in small signal amplification circuits where high frequency and temperature stability are essential.
● Signal Processing: Effective in high-speed signal processing and low-power electronic devices.
● Consumer Electronics: Used in various consumer electronics for efficient switching and amplification tasks.
| File Name | Title | Description |
|---|---|---|
| BC857BW SOT-323.pdf | BC857BW SOT-323 | - |
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MMST3906 PNP Digital Transistor engineered to deliver exceptional performance in a wide range of electronic applications. With a collector-emitter voltage (Vceo) of 40V and a maximum collector current (Ic) of 200mA, this transistor is designed to handle moderate power levels with reliability. It features a maximum power dissipation (Pd) of 200mW and a low collector-emitter saturation voltage (VCE(sat)) of 0.2V at an Ic of 10mA and Ib of 1mA, ensuring efficient operation in switching and amplification tasks.
Vceo:6V Ic:80mA Pd:380mW VCE:- fT:11GHz Working temperature:150℃@(Tj)
Vceo:12V Ic:100mA Pd:150mW VCE:- fT:8GHz Working temperature:150℃@(Tj)
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Type：PNP Vceo: -25V Ic: -1.5A Pd: 1W VCE(sat)@Ic,Ib: -0.5V@-800mA,-80mA fT: 100MHz
Vceo:-160V Ic:-1A Pd:0.5W VCE(sat):-1.5V fT:15MHz Working temperature:150℃(Tj)
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