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The 2N5401 is a versatile PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification in electronic circuits. Enclosed in a TO-92 package, it offers robust performance with a maximum collector-emitter voltage (Vceo) of -150V and a maximum collector current (Ic) of -0.6A. This transistor is well-regarded for its reliability and ease of integration in various circuit designs.
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Description:
The 2N5401 is a versatile PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification in electronic circuits. Enclosed in a TO-92 package, it offers robust performance with a maximum collector-emitter voltage (Vceo) of -150V and a maximum collector current (Ic) of -0.6A. This transistor is well-regarded for its reliability and ease of integration in various circuit designs.
Features:
Applications:
The 2N5401 transistor is suitable for a wide range of applications, including:
| File Name | Title | Description |
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| 2N5401.PDF | 2N5401 | - |
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Type：PNP Vceo: -25V Ic: -1.5A Pd: 1W VCE(sat)@Ic,Ib: -0.5V@-800mA,-80mA fT: 100MHz
Type：PNP Vceo: -25V Ic: -1.5A Pd: 1W VCE(sat)@Ic,Ib: -0.5V@-800mA,-80mA fT: 100MHz
The 2SA1015-B PNP Bipolar Transistor designed to deliver exceptional performance and reliability in a wide range of electronic applications. With its advanced specifications and robust design, this transistor stands out for its efficiency in signal amplification and switching operations.
Vceo:-160V Ic:-1A Pd:0.5W VCE(sat):-1.5V fT:15MHz Working temperature:150℃(Tj)
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