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● High density cell design for ultra low RDSON
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
General Description
The SL40P05Y is a high-performance P-Channel Enhancement MOSFET designed to deliver efficient switching and low resistance in a compact SOT-23 package. With its high voltage rating and low RDS(on), this MOSFET is ideal for various applications, including power management, DC-DC converters, and load switching in space-constrained designs.
Features
● High density cell design for ultra low RDSON
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Applications
● Power switching application
● Hard switched and high frequency circuits
● DC-DC converter
Product Summary
| VDS | RDS(ON) MAX | ID MAX |
| -40V | 90mΩ@-10V | -4.4A |
| 150mΩ@-4.5V |
| File Name | Title | Description |
|---|---|---|
| SL40P05Y SOT-23.pdf | SL40P05Y SOT-23 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Super Low Gate Charge Excellent Cdv/dt effect decline Green Device Available
Green Device Available Excellent CdV/dt effect decline Advanced high cell densityTrench technology
● Leading trench technology for low RDS(on) ● Low Gate Charge
● Leading trench technology for low RDS(on) ● Low Gate Charge
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
● Leading trench technology for low RDS(on) ● Low Gate Charge
The SL2301D P-Channel MOSFET in SOT-23 offers -20V Vds, -2.3A drain current, and 0.7W power dissipation, with low RDS(on) and gate charge for efficient switching.
