SL3414A N-Channel Enhancement MOSFET SOT-23

The SL3414A is an N-Channel Enhancement MOSFET in an SOT-23 package, featuring a Vdss of 20V and Id of 4.2A. It has a low RDS(on) of 41mΩ at Vgs 4.5V and Id 4.2A, ensuring efficient switching performance.

● Designed for efficient low-side switching and control applications.
● Capable of withstanding drain-source voltages up to 20V, suitable for low-voltage applications where reliability and performance are crucial.
● Supports a continuous drain current of up to 4.2A, providing ample current handling for a range of electronic circuits.

Download datasheet Inquiry

Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 


General Description

The SL3414A is a high-performance N-Channel Enhancement MOSFET designed in a compact SOT-23 package. It is engineered to deliver reliable and efficient performance for low-voltage applications. With its low on-resistance and low gate threshold voltage, this MOSFET is ideal for a variety of switching and amplification tasks, providing optimal efficiency and power management in space-constrained designs.


Features

● Designed for efficient low-side switching and control applications.

● Capable of withstanding drain-source voltages up to 20V, suitable for low-voltage applications where reliability and performance are crucial.

● Supports a continuous drain current of up to 4.2A, providing ample current handling for a range of electronic circuits.

● Features a low on-resistance of 41mΩ at a gate-source voltage of 4.5V and a drain current of 4.2A, ensuring efficient operation and reduced power loss.

● Offers a very low gate-source threshold voltage of 0.6V at a drain current of 250μA, enabling effective switching with minimal gate drive voltage.

● Packaged in a compact SOT-23 footprint, making it ideal for use in space-sensitive applications and surface-mount designs.


Applications

● Low-Voltage Switching: Perfect for low-voltage switching tasks in consumer electronics, portable devices, and compact electronic systems.

● Power Management: Suitable for power management applications where efficiency and thermal performance are essential.

● Signal Processing: Effective for signal processing and amplification tasks requiring a high level of precision and control.





Support

If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.


Longevity

The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.

Related Products

Slkor SL3414A

SL2324 N-Channel Enhancement MOSFET SOT-23

Trench Power LV MOSFET technology High density cell design for low RDS(ON) High Speed switching

2N7002E-正面

2N7002E N-Channel Enhancement MOSFET SOT-23

High power and current handing capability Lead free product is acquired Surface mount package

SL2328A-正面

SL2328A N-Channel Enhancement MOSFET SOT-23

Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON)

SL2308A-正面

SL2308A N-Channel Enhancement MOSFET SOT-23

The SL2308A N-Channel MOSFET in SOT-23 offers 60V Vds, 3A Id, ultra-low gate charge, and efficient power management for reliable switching in compact, high-performance applications.

FDV305N-正面

FDV305N N-Channel Enhancement MOSFET SOT-23

● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching

SL3424-正面

SL3424 N-Channel Enhancement MOSFET SOT-23

● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching

FDN337N-正面

FDN337N N-Channel Enhancement MOSFET SOT-23

This N-Channel MOSFET offers 30V Vds, 2.2A Id, and 0.5W Pd, featuring Trench Power LV technology and high-speed switching for efficient, low-power operation.

FDN337N-正面

FDN305N N-Channel Enhancement MOSFET SOT-23

The FDN305N N-Channel MOSFET in SOT-23 offers 20V Vds, 0.9A Id, low RDS(on), and uses Trench Power LV technology for efficient, reliable switching in compact designs.

Service hotline

+86 0755-83044319

Power Management

Transistor

WeChat

Connect via WeChat