Display 3D model
Service hotline
+86 0755-83044319
Trench Power LV MOSFET technology
High density cell design for low RDS(ON)
High Speed switching
Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
General Description
The SL2324 N-Channel Enhancement MOSFET, encapsulated in a compact SOT-23 package, is designed to deliver high performance and reliability for various switching and control applications. With its robust specifications, including high voltage handling and low on-resistance, the SL2324 is well-suited for use in both consumer and industrial electronics where efficient power management and compact size are essential.
Features
● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
Applications
● DC-DC Converters
● Power management functions
| File Name | Title | Description |
|---|---|---|
| SL2324 SOT-23.pdf | SL2324 SOT-23 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
High power and current handing capability Lead free product is acquired Surface mount package
Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON)
The SL2308A N-Channel MOSFET in SOT-23 offers 60V Vds, 3A Id, ultra-low gate charge, and efficient power management for reliable switching in compact, high-performance applications.
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
This N-Channel MOSFET offers 30V Vds, 2.2A Id, and 0.5W Pd, featuring Trench Power LV technology and high-speed switching for efficient, low-power operation.
The FDN305N N-Channel MOSFET in SOT-23 offers 20V Vds, 0.9A Id, low RDS(on), and uses Trench Power LV technology for efficient, reliable switching in compact designs.
The SL2302D N-Channel MOSFET in SOT-23 offers 20V Vds, 2.5A drain current, and high power handling, using Trench Power LV technology for efficient, reliable switching.
