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● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
● Description:
This N-Channel MOSFET provides reliable operation with a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 3.8A. With a low on-resistance (Rds(on)) of just 43mΩ at a gate-source voltage (Vgs) of 10V and a drain current of 3.8A, this MOSFET ensures minimal power loss and efficient performance. The threshold voltage (Vgs(th)) is a low 0.5V, enabling it to switch on with minimal gate drive.
● Features:
● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
● Application:
● Battery protection
● Load switch
● Power management
| File Name | Title | Description |
|---|---|---|
| SL3424 SOT-23.pdf | SL3424 SOT-23 | - |
| RoHS-1.pdf | RoHS | - |
| REACH.pdf | REACH | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
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Longevity
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