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The FDN305N N-Channel MOSFET in SOT-23 offers 20V Vds, 0.9A Id, low RDS(on), and uses Trench Power LV technology for efficient, reliable switching in compact designs.
Download datasheet Inquiry● Description:
The FDN305N N-Channel Enhancement MOSFET SOT-23 is designed to deliver reliable and efficient switching in a compact package. With a maximum drain-to-source voltage (Vds) of 20V and a continuous drain current (Id) of 0.9A, this MOSFET is engineered to handle moderate power requirements with precision. Its low on-resistance and low gate threshold voltage make it an ideal choice for various electronic applications.
● Features:
● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
● Application:
● Battery protection
● Load switch
● Power management
| File Name | Title | Description |
|---|---|---|
| FDV305N SOT-23.pdf | FDV305N SOT-23 | - |
| RoHS-1.pdf | RoHS | - |
| REACH.pdf | REACH | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
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