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● Trench Power LV MOSFET technology
● High Density Cell Design for Low RosoN
● High Speed switching
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS -12V
● lD -6A
● RDSON(at VGS=-4.5V) <40 mohm
● RDSON(at VGS=-2.5V) <50 mohm
● RDSON(at VGS=-1.8V) <70 mohm
General Description
● Trench Power LV MOSFET technology
● High Density Cell Design for Low RosoN
● High Speed switching
Applications
● Battery protection
● Load switch
● Power management
| File Name | Title | Description |
|---|---|---|
| SL2333A SOT-23.pdf | SL2333A SOT-23 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Super Low Gate Charge Excellent Cdv/dt effect decline Green Device Available
Green Device Available Excellent CdV/dt effect decline Advanced high cell densityTrench technology
● Leading trench technology for low RDS(on) ● Low Gate Charge
● Leading trench technology for low RDS(on) ● Low Gate Charge
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
● Leading trench technology for low RDS(on) ● Low Gate Charge
The SL2301D P-Channel MOSFET in SOT-23 offers -20V Vds, -2.3A drain current, and 0.7W power dissipation, with low RDS(on) and gate charge for efficient switching.
