Display 3D model
Service hotline
+86 0755-83044319
● Trench Power LV MOSFET technology
● High density cell design for Low RDS(ON)
● High Speed switching
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS -40V
● ID -4.4A
● RDS(ON)( at VGS=-10V) ＜90mohm
● RDS(ON)( at VGS=-4.5V)＜150mohm
General Description
● Trench Power LV MOSFET technology
● High density cell design for Low RDS(ON)
● High Speed switching
| File Name | Title | Description |
|---|---|---|
| SL2319A SOT-23.pdf | SL2319A SOT-23 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Super Low Gate Charge Excellent Cdv/dt effect decline Green Device Available
Green Device Available Excellent CdV/dt effect decline Advanced high cell densityTrench technology
● Leading trench technology for low RDS(on) ● Low Gate Charge
● Leading trench technology for low RDS(on) ● Low Gate Charge
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
● Leading trench technology for low RDS(on) ● Low Gate Charge
The SL2301D P-Channel MOSFET in SOT-23 offers -20V Vds, -2.3A drain current, and 0.7W power dissipation, with low RDS(on) and gate charge for efficient switching.
