Display 3D model
Service hotline
+86 0755-83044319
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
MAXIMUM RATINGS
| Characteristic | Symbol | Max | Unit |
| Drain-SourceVoltage | BVDSS | 20 | V |
| Gate-SourceVoltage | VGS | 10 | V |
| DrainCurrent(continuous) | ID | 4 | A |
| DrainCurrent(pulsed) | IDM | 15 | A |
| TotalDeviceDissipation | PD | 1200 | mW |
| TA=25℃ | |||
| Junction | TJ | 150 | ℃ |
| SolderTemperature/SolderTime | T/t | 260/10 | ℃/S |
| StorageTemperature | Tstg | -55to+150 | ℃ |
| File Name | Title | Description |
|---|---|---|
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| REACH.pdf | REACH | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| RoHS-1.pdf | RoHS | - |
| SL2306.pdf | SL2306 | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Trench Power LV MOSFET technology High density cell design for low RDS(ON) High Speed switching
High power and current handing capability Lead free product is acquired Surface mount package
Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON)
The SL2308A N-Channel MOSFET in SOT-23 offers 60V Vds, 3A Id, ultra-low gate charge, and efficient power management for reliable switching in compact, high-performance applications.
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
This N-Channel MOSFET offers 30V Vds, 2.2A Id, and 0.5W Pd, featuring Trench Power LV technology and high-speed switching for efficient, low-power operation.
The FDN305N N-Channel MOSFET in SOT-23 offers 20V Vds, 0.9A Id, low RDS(on), and uses Trench Power LV technology for efficient, reliable switching in compact designs.
