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●Green device available.
●Advanced high cell denity trench technology for ultra RDS(ON).
●Excellent package for good heat dissipation.
Description
lThis p-Channel MOSFET uses advanced trench technology anddesign to provide excellent Roson, with low gate charge. It can be used in a wide variety of applications.
Features
lVDS=-40V,l=-10A,RDS(ON)<15m Ω @VGS=-10V
lLow gate charge.
lGreen device available.
lAdvanced high cell denity trench technology for ultra RDS(ON).
lExcellent package for good heat dissipation.
| File Name | Title | Description |
|---|---|---|
| SL10P04S SOP-8.pdf | SL10P04S SOP-8 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
Support
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
100% EAS Guaranteed Green Device Available Super Low Gate Charge
Green device available. Advanced high cell denity trench technology for uitra low RDS(ON) Excellent package for good heat dissipation.
● Trench Power LV MOSFET technology ● High density cell design for Low RDS(ON) ● High Speed switching
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
● Green device available. ● Advanced high cell denity trench technology for ultra low RDS(ON). ● Excellent package for good heat dissipation.
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
● Trench Power LV MOSFET technology. ● High density cell design for Low RDS(ON). ● High Speed switching
● Trench Power LV MOSFET technology. ● High density cell design for Low RDS(ON). ● High Speed switching
