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RS2MW Fast Recovery Rectifier Diode
Download datasheet InquirySurface Mount Fast Recovery Rectifiers
Reverse Voltage-50 to 1000 V
Forward Current-2A
FEATURES
For surface mounted applications
Low profile package
Glass Passivated Chip Junction
ldeal for automated placement
Fast reverse recovery time
Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
Case: SOD-123FL
Terminals: Solderable per MIL-STD-750,Method 2026
Approx.Weight: 15mg 0.00053oz
| File Name | Title | Description |
|---|---|---|
| RS2MW SOD-123FL.pdf | RS2MW SOD-123FL | - |
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The ES3JBF Fast Recovery Rectifier Diode SMBF is a high-performance component designed for demanding applications. With a maximum reverse repetitive voltage (VRRM) of 600V, it ensures robust operation under high-voltage conditions. This diode supports a continuous forward current (IO) of 3A, making it suitable for high-current circuits. The forward voltage (VF) of 1.7V minimizes power loss and enhances efficiency. It boasts an ultra-low reverse leakage current (IR) of just 5μA, ensuring stable performance even in low-voltage scenarios. Its fast reverse recovery time (trr) of 35ns enhances switching performance, ideal for high-speed applications. Packaged in the compact SMBF form factor, this diode is perfect for use in power supplies, voltage regulation, and protection circuits.
The SF1006DS Fast Recovery Rectifier Diode TO-252 is engineered for reliability and efficiency in a variety of electronic applications. This diode features a Reverse Repetitive Voltage (VRRM) of 400V and a forward current (IO) rating of 10A, making it ideal for use in demanding environments where both high voltage and current handling are crucial. Its low forward voltage drop (VF) of 0.95V ensures minimal power loss, while its ultra-low reverse leakage current (IR) of 1μA guarantees optimal performance.
The SF1004DS Fast Recovery Rectifier Diode TO-252 is engineered for reliability and efficiency in a variety of electronic applications. This diode features a Reverse Repetitive Voltage (VRRM) of 400V and a forward current (IO) rating of 10A, making it ideal for use in demanding environments where both high voltage and current handling are crucial. Its low forward voltage drop (VF) of 0.95V ensures minimal power loss, while its ultra-low reverse leakage current (IR) of 1μA guarantees optimal performance.
The SF1002DS Fast Recovery Rectifier Diode TO-252 is engineered for reliability and efficiency in a variety of electronic applications. This diode features a Reverse Repetitive Voltage (VRRM) of 200V and a forward current (IO) rating of 10A, making it ideal for use in demanding environments where both high voltage and current handling are crucial. Its low forward voltage drop (VF) of 0.95V ensures minimal power loss, while its ultra-low reverse leakage current (IR) of 1μA guarantees optimal performance.
This diode features a peak reverse voltage rating (VRRM) of 400V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.25V. Its fast reverse recovery time (trr) of just 35ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 200V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.25V. Its fast reverse recovery time (trr) of just 500ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 1000V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.3V. Its fast reverse recovery time (trr) of just 500ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 200V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1V. Its fast reverse recovery time (trr) of just 50ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
