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The SL80N08D features advanced trench technology, offering low RDS(ON), minimal gate charge, and operates with gate voltages from 4.5V. Ideal for battery protection and switching applications.
Download datasheet InquiryDescription
The SL80N08Duses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
Features
lVDS= 80V ID=80A
lRDS(ON)< 6.5mΩ VGS=10V
Application
lBattery protection
lLoad switch
lUninterruptible power supply
| File Name | Title | Description |
|---|---|---|
| SL80N08D TO-252.pdf | SL80N08D TO-252 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
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Fast switching 100% avalanche tested Improved dv/dt capability
Type: N-channel Vdss:650V Id: 8A RDS(on)@Vgs,Id: 550mΩ@10V,2.5A Vgs(th)@Id: 4.5V@250μA Pd: 69W
Gate Charge (Typical 18.5nC) Improved dv/dt Capability 100% Avalanche Tested
Extremely high dv/dt capability 100% avalanche tested Gate charge minimized
Fast switching 100% avalanche tested Improved dv/dt capability
Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON)
Improved dv/dt capability High density cell design for ultra low Rdson Excellent package for good heat dissipation
Super high density cell designfor extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability
