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● Fast switching
● Good stability and uniformity with high EAS
● Improved dv/dt capablity
Description
● The Power Device is produced using advanced TRENCH technology.
● This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching perfomance, and with stand high energy pulse in the avalanche and commutation mode.
Features
● Vps=60V，ID=50A
● RDs ( ON )Tp= 14m2 @VGs =10V
● Low gate charge ( typical 33nC)
● High ruggedness
● Fast switching
● Good stability and uniformity with high EAS
● Improved dv/dt capablity
Applications
● DC/DC Converters in Computing, Servers
● Insolated DC/DC Converters in Telecom and Industrial
● Uninterruptible Power Supply
| File Name | Title | Description |
|---|---|---|
| SL50N06D TO-252.pdf | SL50N06D TO-252 | - |
| RoHS-1.pdf | RoHS | - |
| REACH.pdf | REACH | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Fast switching 100% avalanche tested Improved dv/dt capability
Type: N-channel Vdss:650V Id: 8A RDS(on)@Vgs,Id: 550mΩ@10V,2.5A Vgs(th)@Id: 4.5V@250μA Pd: 69W
Gate Charge (Typical 18.5nC) Improved dv/dt Capability 100% Avalanche Tested
Extremely high dv/dt capability 100% avalanche tested Gate charge minimized
Fast switching 100% avalanche tested Improved dv/dt capability
Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON)
Improved dv/dt capability High density cell design for ultra low Rdson Excellent package for good heat dissipation
Super high density cell designfor extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability
