Display 3D model
Service hotline
+86 0755-83044319
Trench Power LV MOSFET technology offers high power and current handling capability, ensuring efficient performance in demanding applications.
Download datasheet InquiryProduct Summary
lVDS 60V
lID 100mA
lRDS(ON)( at VGS=10V)＜8.0Ω
lRDS(ON)( at VGS=4.5V)＜13.0Ω
lESD Protected Up to 2.0KV (HBM)
General Description
lTrench Power LV MOSFET technology
lHigh Power and current handing capability
Applications
lLoad/Power Switching
lInterfacing Switching
lLogic Level Shift
| File Name | Title | Description |
|---|---|---|
| 2N7002KT SOT-523.pdf | 2N7002KT SOT-523 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Fast switching 100% avalanche tested Improved dv/dt capability
Type: N-channel Vdss:650V Id: 8A RDS(on)@Vgs,Id: 550mΩ@10V,2.5A Vgs(th)@Id: 4.5V@250μA Pd: 69W
Gate Charge (Typical 18.5nC) Improved dv/dt Capability 100% Avalanche Tested
Extremely high dv/dt capability 100% avalanche tested Gate charge minimized
Fast switching 100% avalanche tested Improved dv/dt capability
Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON)
Improved dv/dt capability High density cell design for ultra low Rdson Excellent package for good heat dissipation
Super high density cell designfor extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability
