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SS8550 PNP Bipolar Transistor
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PNP Silicon Epitaxial Planar Transistor
Description
PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications.
| File Name | Title | Description |
|---|---|---|
| SS8550 SOT-89.pdf | SS8550 SOT-89 | - |
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Type：PNP Vceo: -25V Ic: -1.5A Pd: 1W VCE(sat)@Ic,Ib: -0.5V@-800mA,-80mA fT: 100MHz
Vceo:-160V Ic:-1A Pd:0.5W VCE(sat):-1.5V fT:15MHz Working temperature:150℃(Tj)
The MMBT3906M is a high-performance PNP bipolar transistor housed in a compact SOT-723 package. It is designed for various electronic applications, offering reliable switching and amplification capabilities in a small footprint.
?Introducing the 2SB1132-R PNP Bipolar Transistor, a high-performance component designed for demanding low-voltage and medium-current applications. Housed in a compact SOT-89 package, this transistor features a maximum collector-emitter voltage (Vceo) of -32V, suitable for various switching and amplification needs. With a collector current (Ic) capability of up to -1A and a power dissipation rating of 0.5W, it offers reliable performance in a range of circuits. The 2SB1132-R also boasts a low saturation voltage (VCE(sat)) of 0.5V, ensuring efficient operation.
The 2SC3357 is an ultra-high-frequency low-noise power transistor, utilizing a planar NPN silicon epitaxial bipolar process. It offers high power gain,low noise figure,a wide dynamic range, and excellent current characteristics. Packaged in a SOT-89 surface-mount configuration, it is primarily used in VHF, UHF,and CATV applications for high-frequency broadband low-noise amplification.
The 2SB1260-R PNP Bipolar Transistor is a robust and versatile component designed for high-reliability applications in various electronic systems. Engineered to handle up to 80V of collector-emitter voltage, this transistor ensures stable performance even in demanding environments. With its compact design and excellent thermal characteristics, this is ideal for applications requiring precise control and efficiency.
The 2SB1386-R PNP Digital Transistor is a versatile device optimized for high-current and high-frequency operations. With a maximum collector-emitter voltage (VCE) of 20V and a continuous collector current (Ic) rating of 5A, it is well-suited for power amplification and switching applications. This transistor features a low saturation voltage (VCE(sat)) of 0.35V at 4A collector current and 0.1A base current, ensuring minimal power loss and efficient performance.
The 2SA1661-Y PNP Digital Transistor is a high-performance transistor designed to meet the demands of modern electronic applications. With its robust voltage handling capabilities and high frequency response, this transistor offers reliable performance and efficiency in a variety of circuits. The 2SA1661-Y PNP Digital Transistor is particularly suited for high-frequency and high-temperature environments, ensuring stability and durability even under challenging conditions.
