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The S8550 is a high-performance PNP Bipolar Junction Transistor (BJT) designed for general-purpose switching and amplification applications. Encapsulated in the compact SOT-23 package, this transistor offers efficient operation and versatility in a wide range of electronic circuits.
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Description:
The S8550 is a high-performance PNP Bipolar Junction Transistor (BJT) designed for general-purpose switching and amplification applications. Encapsulated in the compact SOT-23 package, this transistor offers efficient operation and versatility in a wide range of electronic circuits.
Features:
● Voltage Rating: Supports a maximum collector-emitter voltage (Vceo) of -25V, suitable for circuits requiring negative voltage operation.
Applications:
The S8550 transistor is suitable for a wide range of electronic applications, including:
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| S8550.pdf | S8550 | - |
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The SS8550 is a versatile PNP bipolar junction transistor designed for various low-power switching and amplification applications. With a maximum collector-emitter voltage (Vceo) of 25V and a collector current (Ic) rating of 1.5A, it offers reliable performance in compact electronic circuits. Its low collector-emitter saturation voltage (VCE(sat)) ensures efficient switching even at moderate currents, making it suitable for diverse electronic designs.
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Type：PNP Vceo: -25V Ic: -1.5A Pd: 1W VCE(sat)@Ic,Ib: -0.5V@-800mA,-80mA fT: 100MHz
Type：PNP Vceo: -25V Ic: -1.5A Pd: 1W VCE(sat)@Ic,Ib: -0.5V@-800mA,-80mA fT: 100MHz
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