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The SS8550 is a versatile PNP bipolar junction transistor designed for various low-power switching and amplification applications. With a maximum collector-emitter voltage (Vceo) of 25V and a collector current (Ic) rating of 1.5A, it offers reliable performance in compact electronic circuits. Its low collector-emitter saturation voltage (VCE(sat)) ensures efficient switching even at moderate currents, making it suitable for diverse electronic designs.
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Description:
The SS8550 is a versatile PNP bipolar junction transistor designed for various low-power switching and amplification applications. With a maximum collector-emitter voltage (Vceo) of 25V and a collector current (Ic) rating of 1.5A, it offers reliable performance in compact electronic circuits. Its low collector-emitter saturation voltage (VCE(sat)) ensures efficient switching even at moderate currents, making it suitable for diverse electronic designs.
FEATURES
● High Collector Current.
● Complementary to SS8050.
Applications:
The SS8550 transistor is ideal for a wide range of applications, including:
| File Name | Title | Description |
|---|---|---|
| SS8550.pdf | SS8550 | - |
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Type：PNP Vceo: -25V Ic: -1.5A Pd: 1W VCE(sat)@Ic,Ib: -0.5V@-800mA,-80mA fT: 100MHz
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