Display 3D model
Service hotline
+86 0755-83044319
2SC4226 R25 Bipolar Transistor SOT-323
Download datasheet InquiryNPN Silicon Epitaxial Planar Transistor
FEATURES
Low noise.
High gain.
Power dissipation. (Pc=150mW)
APPLICATIONS
High frequency low noise amplifier.
| File Name | Title | Description |
|---|---|---|
| 2SC4226 R25 SOT-323.pdf | 2SC4226 R25 SOT-323 | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Vceo:6V Ic:80mA Pd:380mW VCE:- fT:11GHz Working temperature:150℃@(Tj)
Vceo:12V Ic:100mA Pd:150mW VCE:- fT:8GHz Working temperature:150℃@(Tj)
The 2SC4228 is an ultra-high-frequency low-noise transistor using planar NPN silicon epitaxial bipolar technology. It features high power gain and low noise characteristics. Due to its ultra-small SOT-323 package, it is particularly suited for high-density surface-mount applications. It is primarily used in VHF and UHF low-noise amplifiers.
The 2SC3356 is an ultra-high frequency low-noise transistor utilizing planar NPN silicon epitaxial bipolar technology. It features high power gain, low noise figure, wide dynamic range, and excellent current characteristics.Packaged in SOT-23 SMD format, it is primarily used in VHF, UHF, and CATV broadband low-noise amplifiers.
The 2SC4081-R PNP Bipolar Transistor is a high-performance transistor designed for demanding electronic applications. Engineered for robustness and reliability, this transistor excels in various high-frequency and high-temperature environments, making it an ideal choice for advanced electronic circuits and systems.
MMST3906 PNP Digital Transistor engineered to deliver exceptional performance in a wide range of electronic applications. With a collector-emitter voltage (Vceo) of 40V and a maximum collector current (Ic) of 200mA, this transistor is designed to handle moderate power levels with reliability. It features a maximum power dissipation (Pd) of 200mW and a low collector-emitter saturation voltage (VCE(sat)) of 0.2V at an Ic of 10mA and Ib of 1mA, ensuring efficient operation in switching and amplification tasks.
The BC857CW is a versatile PNP digital transistor housed in a compact SOT-323 package. Designed for high-frequency switching applications, this transistor combines reliable performance with space-saving features. Its robust construction and efficient operation make it an ideal choice for various electronic circuits and systems.
The BC817-25W is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification tasks in electronic circuits. Encapsulated in a SOT-323 surface-mount package, this transistor offers reliable performance with a maximum collector-emitter voltage (Vceo) of 45V and a maximum continuous collector current (Ic) of 500mA. Its compact size and robust specifications make it suitable for a wide range of applications where space and performance are crucial considerations.
