2SC3585R45 NPN Bipolar Transistor SOT-23-3L

35mA|200mW|10V|10MHz|SOT-23-3L|10V|Bipolar Transistor (BJT)|Bipolar Transistor (BJT)|

The 2SC3585 is an ultra-high-frequency low-noise transistor using planar NPN silicon epitaxial bipolar technology. It features high power gain, low noise figure, wide dynamic range, and ideal current characteristics. It comes in a SOT-23-3L surface-mount package and is primarily used in VHF, UHF, and CATV high-frequency broadband low-noise amplifiers.

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Description

The 2SC3585 is an ultra-high-frequency low-noise transistor using planar NPN silicon epitaxial bipolar technology. It features high power gain, low noise figure, wide dynamic range, and ideal current characteristics. It comes in a SOT-23-3L surface-mount package and is primarily used in VHF, UHF, and CATV high-frequency broadband low-noise amplifiers.

FEATURES

● Highgain: |S21e|typically5.5dB

● Lownoise: NFtypically2.5dB

● Gain-bandwidthproduct: fTtypically10GHz


Application

● RF and Microwave Amplifiers: Its high transition frequency makes it ideal for use in radio frequency (RF) and microwave amplifier circuits.

● Signal Processing: Perfect for signal processing applications requiring compact size and high-frequency operation.

● Switching Circuits: Suitable for low-power switching applications where space is limited but performance remains critical.

● Consumer Electronics: Ideal for use in portable and handheld devices that demand reliable operation in a small form factor.


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