SL5304DCP NPN Bipolar TransistorTO-252

Our advantages    

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.    

Description

Introducing our high-performance power transistor designed for demanding applications: the V_CEO 400V, capable of handling up to 4A with a maximum power dissipation of 35W. This robust device features a collector-emitter saturation voltage (V_CE(sat)) of just 1.5V, ensuring efficient operation and minimal energy loss. With a working temperature of up to 150°C at junction temperature (T_j), it is engineered for reliability and durability in challenging environments.

Features

● Build-in Free-wheeling Diode Makes Efficient Anti-saturation Operation

● No Need to Interest an hfe Value Because of Low 

   Variable Storage-time Spread Even Though Comer 

   Spirit Product.

● Low Base Drive Requirement

● Suitable for Half Bridge Light Ballast Application

Structure

● Silicon Triple Diffused Type

● NPN Silicon Transistor

● Integrated Anti-parallel Collector-Emitter Diode

Applications

● Switching Power Supplies

● Motor Control

● Power Amplifiers

● Inverters