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2N3904 NPN BJT Transistor TO-92
Download datasheet InquiryDescription
Silicon NPN transistor in a TO-92 Plastic Package.
Applications
Low current.Low voltage.
General purpose amplifier.
| File Name | Title | Description |
|---|---|---|
| 2N3904 TO-92.pdf | 2N3904 TO-92 | - |
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Introducing the 2N5551 NPN Bipolar Transistor, a high-performance component designed for demanding electronic applications. Housed in a TO-92 package, this transistor offers a maximum collector-emitter voltage (Vceo) of 160V and supports a collector current (Ic) of up to 0.6A. With a power dissipation capability of 625mW and a low saturation voltage (VCE(sat)) of 0.2V, it ensures efficient operation. The 2N5551 also boasts an impressive transition frequency (fT) of 300MHz, making it suitable for high-frequency applications.
The Polar NPN High-Voltage Transistor is designed for robust performance in high-voltage applications. With a collector-emitter voltage rating (Vceo) of 450V and a maximum collector current (Ic) of 0.2A, this transistor is ideal for power switching and amplification tasks. It features a power dissipation (Pd) capability of 0.625W and a low collector-emitter saturation voltage (VCE(sat)) of 0.4V at 50mA collector current and 10mA base current. The transistor also provides a transition frequency (fT) of 8MHz, ensuring effective operation at high frequencies. Its durability and efficiency make it a reliable choice for demanding electronic systems.
Silicon NPN transistor in a TO-92 Plastic Package.
The 2N3906 is a versatile NPN bipolar transistor renowned for its reliability and efficiency in various electronic circuits. Encapsulated in a TO-92 package, this transistor is designed to handle a maximum collector-emitter voltage (Vceo) of -40V and a continuous collector current (Ic) of -200mA. With a power dissipation (Pd) rating of 625mW, it efficiently manages heat dissipation under typical operating conditions. The 2N3906 features a high transition frequency (fT) of 250MHz, making it suitable for applications requiring high-speed switching and signal amplification.
BC817-40W NPN BJT Transistor SOT-323
Vceo:12V Ic:100mA Pd:1000mW VCE:- fT:10GHz Working temperature:150℃@(Tj)
Vceo:6V Ic:80mA Pd:380mW VCE:- fT:11GHz Working temperature:150℃@(Tj)
Vceo:12V Ic:100mA Pd:150mW VCE:- fT:8GHz Working temperature:150℃@(Tj)
