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● Advanced Trench Technology
● Provide Excellent RDS(ON) and Low Gate Charge
● Lead free product is acquired
● Description:
These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
● Features:
● VDS = 30V,ID =150A
● RDS(ON)，2.8 mΩ(Typ) @ VGS =10V
● RDS(ON)，4.4mΩ(Typ) @ VGS =4.5V
● Advanced Trench Technology
● Provide Excellent RDS(ON) and Low Gate Charge
● Lead free product is acquired
● Application:
● Load Switch
● PWM Application
● Power management
| File Name | Title | Description |
|---|---|---|
| SL30N02D TO-252.pdf | SL30N02D TO-252 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
● Small Package (SOT723). ● Ultra Low voltage drive (1.2V drive). ● Pb-free lead plating ; RoHS compliant.
Fast switching 100% avalanche tested Improved dv/dt capability
Type: N-channel Vdss:650V Id: 8A RDS(on)@Vgs,Id: 550mΩ@10V,2.5A Vgs(th)@Id: 4.5V@250μA Pd: 69W
Gate Charge (Typical 18.5nC) Improved dv/dt Capability 100% Avalanche Tested
Extremely high dv/dt capability 100% avalanche tested Gate charge minimized
Fast switching 100% avalanche tested Improved dv/dt capability
Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON)
Improved dv/dt capability High density cell design for ultra low Rdson Excellent package for good heat dissipation
