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● Fast switching
● 100% avalanche tested
● Improved dv/dt capability
● Description:
The SL160N03Q N-Channel Enhancement MOSFET PDFN-8L(5x6) is designed for demanding applications where efficiency and reliability are crucial. This MOSFET boasts a maximum drain-source voltage of 30V and a substantial continuous drain current capability of 160A, making it ideal for high-power switching tasks.
● Features:
● VDS=30V，ID=160A
● RDS（ON）TYP = 1.6mΩ @VGS =10V
● RDS（ON）TYP = 2.3mΩ @VGS =4.5V
● Very Low On-resistance RDS(ON)
● LowCrss
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability
● Application:
● PWM Application
● Load Switch
● Power Management
| File Name | Title | Description |
|---|---|---|
| SL160N03Q PDFN5X6-8L.pdf | SL160N03Q PDFN5X6-8L | - |
| RoHS-1.pdf | RoHS | - |
| REACH.pdf | REACH | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
This N-Channel MOSFET offers VDS = 30V, ID = 178A, and RDS(on) = 1.1mΩ at VGS = 10V, ensuring stable, efficient performance for high-power switching applications.
● Very low on-resistance RDS(ON) ● Low Gate Charge ● Excellent Gate Charge x RDS(ON) Product
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
100%Avalanche Tested Fast Switching Improved dv/dt Capability
100% Avalanche Tested Fast Switching Improved dv/dt Capability
Fast Switching Low ON Resistance Low Gate Charge
Perfect for low-side switching and control tasks Suitable for a variety of moderate current applications Efficient switching with minimal power loss and heat generation
Excellent package for good heat dissipation Fully characterized avalanche voltage and current Special process technology for high ESD capability
