SL100N08 N-Channel Enhancement MOSFET TO-200

N-Channel,Vdss:80V,Id:100A,RDS(on):12mΩ,Vgs(th):2.5V

Excellent package for good heat dissipation
Fully characterized avalanche voltage and current
Special process technology for high ESD capability  

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General Features  
● VDS =80V,ID =100A  RDS(ON) < 12m? @ VGS=10V  
● Special process technology for high ESD capability  
● High density cell design for ultra low Rdson  
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS  
● Excellent package for good heat dissipation

Application  
● Power switching application  
● Hard switched and high frequency circuits
● Uninterruptible power supply



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