SL80N10 N-Channel Enhancement MOSFET TO-220

N-Channel,Vdss:100V,Id:80A,Pd:188W,RDS(on):6.6mΩ,Vgs(th):2.3V,Working Temperature:-55℃~+175℃

Excellent package for good heat dissipation
Fully characterized avalanche voltage and current  
Special process technology for high ESD capability  

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General Features
● VDS =100V,ID =80A RDS(ON) < 9m? @ VGS=10V  
● Special process technology for high ESD capability  
● High density cell design for ultra low Rdson  
● Fully characterized avalanche voltage and current  
● Good stability and uniformity with high EAS  
● Excellent package for good heat dissipation

Application
● Power switching application
● Hard switched and high frequency circuits  
● Uninterruptible power supply


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