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● Very low on-resistance RDS(ON)
● Low Gate Charge
● Excellent Gate Charge x RDS(ON) Product
General Description
● Very low on-resistance RDS(ON)
● Low Gate Charge
● Excellent Gate Charge x RDS(ON) Product
Applications
● High Frequency Switching and Synchronous Rectification
Product Summary
● VDS 40V
● ID 130A
● RDS(ON) (at VGS =10V) < 1.7mΩ
● RDS(ON) (at VGS =4.5V) < 2.4mΩ
100% DVDS Tested
100% UIS Tested
100% Rg Tested
| File Name | Title | Description |
|---|---|---|
| SL130N04Q.pdf | SL130N04Q | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
Support
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
This N-Channel MOSFET offers VDS = 30V, ID = 178A, and RDS(on) = 1.1mΩ at VGS = 10V, ensuring stable, efficient performance for high-power switching applications.
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
100%Avalanche Tested Fast Switching Improved dv/dt Capability
100% Avalanche Tested Fast Switching Improved dv/dt Capability
Fast Switching Low ON Resistance Low Gate Charge
Perfect for low-side switching and control tasks Suitable for a variety of moderate current applications Efficient switching with minimal power loss and heat generation
Excellent package for good heat dissipation Fully characterized avalanche voltage and current Special process technology for high ESD capability
Low Gate Charge Very low on-resistance RDS(ON) Excellent Gate Charge x RDS(ON) Product
