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This N-Channel MOSFET offers VDS = 30V, ID = 178A, and RDS(on) = 1.1mΩ at VGS = 10V, ensuring stable, efficient performance for high-power switching applications.
Download datasheet Inquiry● Description:
This N-Channel MOSFET offers reliable performance with a maximum drain-source voltage (Vdss) of -20V and a continuous drain current (Id) of -2A. It is ideal for circuits requiring stable and efficient switching.
● Features:
● VDS=30V，ID=178A
● RDS（ON）TYP = 1.1mΩ @VGS =10V
● RDS（ON）TYP = 2.1mΩ @VGS =4.5V
● Very Low On-resistance RDS(ON)
● LowCrss
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability
● Application:
● Current Switch for DC/DC,AC/DC
● Power Management
● Motor Driving, Quick/Wireless Charging
| File Name | Title | Description |
|---|---|---|
| SL180N03Q PDFN5x6-8L.pdf | SL180N03Q PDFN5x6-8L | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
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● High power and current handing capability ● Lead free product is acquired ● Surface mount package
100%Avalanche Tested Fast Switching Improved dv/dt Capability
100% Avalanche Tested Fast Switching Improved dv/dt Capability
Fast Switching Low ON Resistance Low Gate Charge
Perfect for low-side switching and control tasks Suitable for a variety of moderate current applications Efficient switching with minimal power loss and heat generation
Excellent package for good heat dissipation Fully characterized avalanche voltage and current Special process technology for high ESD capability
100% Avalanche Tested Fast Switching Improved dv/dt Capability
Excellent package for good heat dissipation Fully characterized avalanche voltage and current Special process technology for high ESD capability
