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● Low input Capacitance
● Fast Switching Speed
● Low Input / Output Leakage
Product Summary
● VDS 30V
● ID 300mA
● RDS(ON)( at VGS=10V) ＜8.0ohm
● RDS(ON)( at VGS=4.5V) ＜13.0ohm
● ESD Protected Up to 2.5KV (HBM)
General Description
● Trench Power MV MOSFET technology
● Voltage controlled small signal switch
● Low input Capacitance
● Fast Switching Speed
● Low Input / Output Leakage
Applications
● Battery operated systems
● Solid-state relays
● Direct logic-level interface：TTL/CMOS
| File Name | Title | Description |
|---|---|---|
| 2SK3018W SOT-323.pdf | 2SK3018W SOT-323 | N-Channel Power MOSFET |
| SL250N04Q-PDFN56.pdf | SL250N04Q PDFN56 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| REACH.pdf | REACH | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Highdensity celldesign forLow Ros(on) Voltagecontrolled smallsignal switch Rugged andreliable
● Trench Power LV MOSFET technology ● High Power and current handing capability
● TrenchFET Power MOSFET
● Ultra Low Gate Charge cause lower driving requirements ● 100% Avalanche Tested ● ROHS compliant
● Ultra Low Gate Charge cause lower driving requirements ● 100%Avalanche Tested ● ROHS compliant
Fast switching 100% avalanche tested Improved dv/dt capability
100% Avalanche Tested Fast Switching Improved dv/dt Capability
Type: N-channel Vdss:650V Id: 8A RDS(on)@Vgs,Id: 550mΩ@10V,2.5A Vgs(th)@Id: 4.5V@250μA Pd: 69W
