Our advantages    

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.    


Description
The Polar High Power Rectifier Diode in TO-247-2 package is a robust semiconductor device designed for efficient power rectification in demanding industrial applications. With a maximum reverse voltage rating (VRRM) of 1200V and a forward current rating (IF) of 40A, this diode ensures reliable performance under high voltage and current conditions. Featuring a low forward voltage drop (VF Typ) of 1.8V and a power dissipation (PD@TC=25℃) of 385W, it excels in minimizing energy loss and managing heat dissipation effectively.

Features

Maximum junction temperature of 175°C

High Surge Current Capacity

Zero Backward Repetitive Current

Zero Forward Repetitive Voltage

High-Frequency Operation

Switching Properties are free from temperature changes

The forward voltage VF is a positive temperature coefficient

Applications

Solar inverter

Inverter Renewal Reverse Parallel Diode

Vienna Three-Phase PFC Rectifier Converter

EV Charging Station

Switching Power Supply


Support

If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.


Longevity

The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.

Related Products

SL12015B-正面

SL12015B SiC Schottky Barrier Rectifiers TO-247-2

VRRM(V):1200V IF(A):15A VF Typ(V):1.8V PD@TC=25℃(W):220W Package:TO-247-2

SL12020B-正面

SL12020B SiC Schottky Rectifiers TO-247-2

VRRM(V):1200V IF(A):22A VF Typ(V):1.8V PD@TC=25℃(W):272W Package:TO-247-2

SL12030B-正面

SL12030B SiC Power Schottky Diodes TO-247-2

VRRM(V):1200V IF(A):30A VF Typ(V):1.8V PD@TC=25℃(W):288W Package:TO-247-2

SL12010B-正面

SL12010B SiC Schottky Diodes TO-220-2

VRRM(V):1200V IF(A):10.5A VF Typ(V):1.8V PD@TC=25℃(W):153W Package:TO-220-2

SL12005B-正面

SL12005B SiC Schottky Barrier Diodes TO-220-2

VRRM(V):1200V IF(A):5A VF Typ(V):1.8V PD@TC=25℃(W):110W Package:TO-220-2

SL19N120A-正面

SL19N120A High Voltage MOSFET TO-247-3

VCE(V):1200V IC@TC=100℃(A):19A PD@TC=25℃(W):134W TJ(℃):-55~175℃ Package:TO-247-3

Service hotline

+86 0755-83044319

Power Management

Transistor

WeChat

Connect via WeChat