Our advantages:

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 


Description:

The SL19N120A is a high voltage MOSFET designed to deliver robust performance and reliability in power switching applications. With its impressive specifications and TO-247-3 package, it provides efficient power management solutions for demanding industrial and automotive environments.

Features:
● High Voltage, Low On-State Resistance
● High Speed, Low Parasitic Capacitance
● High Operating Junction Temperature
● Fast Recovery Body Diode

Applications:
● Photovoltaic Inverter
● UPS Power Supply
● Motor Drive
● High-Voltage DC/DC Converters
● Switching Power Supply


Support

If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.


Longevity

The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.

Related Products

SL12040B-正面

SL12040B SiC Schottky Diode Rectifier TO-247-2

VRRM(V):1200V IF(A):40A VF Typ(V):1.8V PD@TC=25℃(W):385W Package:TO-247-2

SL12010B-正面

SL12010B SiC Schottky Diodes TO-220-2

VRRM(V):1200V IF(A):10.5A VF Typ(V):1.8V PD@TC=25℃(W):153W Package:TO-220-2

SL12015B-正面

SL12015B SiC Schottky Barrier Rectifiers TO-247-2

VRRM(V):1200V IF(A):15A VF Typ(V):1.8V PD@TC=25℃(W):220W Package:TO-247-2

SL12005B-正面

SL12005B SiC Schottky Barrier Diodes TO-220-2

VRRM(V):1200V IF(A):5A VF Typ(V):1.8V PD@TC=25℃(W):110W Package:TO-220-2

SL12020B-正面

SL12020B SiC Schottky Rectifiers TO-247-2

VRRM(V):1200V IF(A):22A VF Typ(V):1.8V PD@TC=25℃(W):272W Package:TO-247-2

SL12030B-正面

SL12030B SiC Power Schottky Diodes TO-247-2

VRRM(V):1200V IF(A):30A VF Typ(V):1.8V PD@TC=25℃(W):288W Package:TO-247-2

Service hotline

+86 0755-83044319

Power Management

Transistor

WeChat

Connect via WeChat