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Super high design for extremely low RDS(ON)
This is a Full RoHS compliance
SOT23-3 package design
Description
lThe SL2308 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology.. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.
Features
l60V/1 . 8 A, RDS(ON)=1 35m?(typ.)@VGS=1 0V
l60V/ 1 ..5 A, RDS(ON)= 1 54m? (typ.)@VGS=4.5V
lSuper high design for extremely low RDS(ON)
lExceptional on-resistance and Maximum DCcurrent capability
lThis is a Full RoHS compliance
lSOT23-3 package design
Application
lPower Management in Note Book
lPortable Equipment
lBattery Powered System
| File Name | Title | Description |
|---|---|---|
| SL2308.pdf | SL2308 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
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High Voltage Tolerance:suitable for high-voltage applications. Low On-Resistance:improving overall efficiency. Wide Operating Temperature Range:reliability in extreme conditions.
Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery
High power and current handing capability Lead free product is acquired Surface mount package
Type:N-Channel Vdss:60V Id:3A Pd:1.38W RDS(on)@Vgs,Id:90mΩ@10V,3A Vgs(th)@Id:3V@250uA Qg@Vgs- Ciss@Vds:550pF@25V Crss@Vds- Working Temperature:+150℃@(Tj)
Trench Power MV MOSFET technology. Voltage controlled small signal switch. Low input Capacitance.
TrenchFET Power MOSFET LOW RDS(ON). Surface mount package
Type: N-channel Vdss: 240V Id: 0.1A RDS(on)@Vgs,Id: 9.07Ω@4.5V,0.09A Vgs(th)@Id: 1.4V@56μA Pd:0.35W
● Green Device Available ● Super Low Gate Charge ● Excellent Cdv/dt effect decline
