Display 3D model
Service hotline
+86 0755-83044319
Trench Power MV MOSFET technology.
Voltage controlled small signal switch.
Low input Capacitance.
Features
●Trench Power MV MOSFET technology.
●Voltage controlled small signal switch.
●Low input Capacitance.
●Fast Switching Speed
●Low input / Output Leakage
Application
●Battery operated systems
●Solid-state relays
| File Name | Title | Description |
|---|---|---|
| 2N7002K SOT-23.pdf | 2N7002K SOT-23 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
High Voltage Tolerance:suitable for high-voltage applications. Low On-Resistance:improving overall efficiency. Wide Operating Temperature Range:reliability in extreme conditions.
Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery
Epoxy meets UL 94 V-0 flammability rating High density cell design for low RDS(ON) Voltage controlled small signal switch
High power and current handing capability Lead free product is acquired Surface mount package
Type:N-Channel Vdss:60V Id:3A Pd:1.38W RDS(on)@Vgs,Id:90mΩ@10V,3A Vgs(th)@Id:3V@250uA Qg@Vgs- Ciss@Vds:550pF@25V Crss@Vds- Working Temperature:+150℃@(Tj)
TrenchFET Power MOSFET LOW RDS(ON). Surface mount package
Type: N-channel Vdss: 240V Id: 0.1A RDS(on)@Vgs,Id: 9.07Ω@4.5V,0.09A Vgs(th)@Id: 1.4V@56μA Pd:0.35W
Trench Power LV MOSFET technology offers high power and current handling capability, ensuring efficient performance in demanding applications.
