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The 2SC4617 is a high-performance NPN bipolar junction transistor (BJT) designed for applications requiring precise signal amplification and high-frequency switching capabilities. Encapsulated in a TO-92L package, this transistor offers reliable operation with a maximum collector-emitter voltage (Vceo) of 50V and a maximum continuous collector current (Ic) of 0.1A. With a power dissipation (Pd) rating of 125mW and an impressive transition frequency (fT) of 180MHz, the 2SC4617 excels in circuits demanding high-speed performance and efficient signal processing.
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Description:
The 2SC4617 is a high-performance NPN bipolar junction transistor (BJT) designed for applications requiring precise signal amplification and high-frequency switching capabilities. Encapsulated in a TO-92L package, this transistor offers reliable operation with a maximum collector-emitter voltage (Vceo) of 50V and a maximum continuous collector current (Ic) of 0.1A. With a power dissipation (Pd) rating of 125mW and an impressive transition frequency (fT) of 180MHz, the 2SC4617 excels in circuits demanding high-speed performance and efficient signal processing.
Features:
Reduces board space.
High hFE,210-460(typical).
Low VCE(sat),<0.5V.
z Available in 8mm,7-inch/3000 Unit Tape and reel.
Applications:
General purpose switching and amplification.
| File Name | Title | Description |
|---|---|---|
| 2SC4617 SOT-523.pdf | 2SC4617 SOT-523 | - |
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Vceo:12V Ic:100mA Pd:1000mW VCE:- fT:10GHz Working temperature:150℃@(Tj)
Vceo:6V Ic:80mA Pd:380mW VCE:- fT:11GHz Working temperature:150℃@(Tj)
Vceo:12V Ic:100mA Pd:150mW VCE:- fT:8GHz Working temperature:150℃@(Tj)
Vceo:4.5V Ic:100nA Pd:135mW VCE:- fT:25GHz Working temperature:150℃@(Tj)
Vceo:15V Ic:300mA Pd:2000mW VCE(sat):- fT:8.5GHz Working temperature:-40℃~150℃@(Tj)
Vceo:40V Ic:2A Pd:300mW VCE(sat):0.5V fT:100MHz Working temperature:-
