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● Fast switching
● 100% avalanche tested
● Improved dv/dt capability
Description
lThis Power MOSFET is produced using advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
lVDS=30V，ID=90A
lRDS（ON）TYP=4.2mΩ@VGS=10V
lRDS（ON）TYP=5.6mΩ@VGS=4.5V
lVery Low On-resistance RDS(ON)
lFast switching
l100% avalanche tested
lImproved dv/dt capability
Application
lPower Management
lPWM Application
lLoad Switch
| File Name | Title | Description |
|---|---|---|
| SL90N03R PDFN5×6-8L.pdf | SL90N03R PDFN5×6-8L | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
● 100% avalanche tested ● Easy to use/drive ● RoHS compliant
● 100% avalanche tested ● Easy to use/drive ● RoHS compliant
● Very Low On-resistance RDS(ON) ● Low Crss ● Fast switching
● Ultra Low Gate Charge cause lower driving requirements ● 100% Avalanche Tested ● ROHS compliant
● Ultra Low Gate Charge cause lower driving requirements ● 100%Avalanche Tested ● ROHS compliant
Fast switching 100% avalanche tested Improved dv/dt capability
100% Avalanche Tested Fast Switching Improved dv/dt Capability
Type: N-channel Vdss:650V Id: 8A RDS(on)@Vgs,Id: 550mΩ@10V,2.5A Vgs(th)@Id: 4.5V@250μA Pd: 69W
