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●1.8 V RDSon rated for Low Voltage Gate Drive
●Very fast switching
●Trench MOSFET technology
Description
A P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
Features
●1.8 V RDSon rated for Low Voltage Gate Drive
●Very fast switching
●Trench MOSFET technology
Applications
●Relay driver
●High-speed line driver
●High-side loadswitch
●Switching circuits
| File Name | Title | Description |
|---|---|---|
| SL2301.pdf | SL2301 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
Support
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation
● TrenchFET Power MOSFET
The SL2301D P-Channel MOSFET in SOT-23 offers -20V Vds, -2.3A drain current, and 0.7W power dissipation, with low RDS(on) and gate charge for efficient switching.
● High dense cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum ● DC current capability
● Low Profile (<1.1mm) ● Available in Tape and Reel ● Fast Switching
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
● PVM applications ● Load switch ● Power management
