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● Very low level gate drive requirements allowing direct operation in 3V circuits. Vas(h) < 1.5V.
● Gate-Source Zener for ESD ruggedness >6ky Human Body Model
● Replace multiple NPN digital transistors with one DMOSFET.
Features
l0.22 A, 25 V. RDS(ON) =4 Ω @ VGS = 4.5 V
RDS(ON) = 5Ω @ VGS = 2.7 V.
lVery low level gate drive requirements allowing direct operation in 3V circuits. Vas(h) < 1.5V.
lGate-Source Zener for ESD ruggedness >6ky Human Body Model
lReplace multiple NPN digital transistors with one DMOSFET.
| File Name | Title | Description |
|---|---|---|
| FDV301N SOT-23.pdf | FDV301N SOT-23 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
High Voltage Tolerance:suitable for high-voltage applications. Low On-Resistance:improving overall efficiency. Wide Operating Temperature Range:reliability in extreme conditions.
Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery
High power and current handing capability Lead free product is acquired Surface mount package
Type:N-Channel Vdss:60V Id:3A Pd:1.38W RDS(on)@Vgs,Id:90mΩ@10V,3A Vgs(th)@Id:3V@250uA Qg@Vgs- Ciss@Vds:550pF@25V Crss@Vds- Working Temperature:+150℃@(Tj)
Trench Power MV MOSFET technology. Voltage controlled small signal switch. Low input Capacitance.
TrenchFET Power MOSFET LOW RDS(ON). Surface mount package
Type: N-channel Vdss: 240V Id: 0.1A RDS(on)@Vgs,Id: 9.07Ω@4.5V,0.09A Vgs(th)@Id: 1.4V@56μA Pd:0.35W
● Green Device Available ● Super Low Gate Charge ● Excellent Cdv/dt effect decline
