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Our diode offers precise voltage control with a maximum VRWM of 5V, ensuring reliable performance in your circuits. With a breakdown voltage (VBR) range from 6V to 9V, it delivers stable operation across various conditions. The diode's low reverse leakage current (IR) of just 1μA enhances circuit efficiency and minimizes power loss. Encased in a compact DFN1006 package, it’s well-suited for space-constrained applications.
Download datasheet InquiryOur advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
Description
Our diode offers precise voltage control with a maximum VRWM of 5V, ensuring reliable performance in your circuits. With a breakdown voltage (VBR) range from 6V to 9V, it delivers stable operation across various conditions. The diode's low reverse leakage current (IR) of just 1μA enhances circuit efficiency and minimizes power loss. Encased in a compact DFN1006 package, it’s well-suited for space-constrained applications.
Features
● Glass Passivated Die Construction
● Uni- and Bi-Directional Versions Available
● Excellent Clamping Capability
● Fast Response Time
● Plastic Material: UL Flammability
Applications
Ideal for protecting sensitive electronics in automotive, consumer electronics, and industrial applications. Its SMA package allows for easy mounting and integration, making it suitable for high-density circuit designs requiring robust transient voltage suppression.
| File Name | Title | Description |
|---|---|---|
| SLESD5311N-2TR.PDF | SLESD5311N-2TR | - |
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SLESDTU5V0A1 is a low-capacitance Transient Voltage Suppressor (TVS) designed to provide electrostatic discharge (ESD) protection for high-speed data interfaces. With typical capacitance of 0.25pF, SLESDTU5V0A1 is designed to protect parasitic-sensitive systems against over-voltage and over-current transient events. It complies with IEC 61000-4-2 (ESD), Level 4 (±15kV air, ±8kV contact discharge), IEC 61000-4-4 (electrical fast transient - EFT) (40A, 5/50 ns), very fast charged device model (CDM) ESD and cable discharge event (CDE), etc. SLESDTU5V0A1 uses ultra-small DFN1006 .Each SLESDTU5V0A1 device canprotect one high - speed data line. It offers system designers flexibility to protect single data line where space is a premium concern. The combined features of low capacitance, ultra-small size and high ESD robustness make ideal for highspeed data port and high -frequency line applications, such as cellular phones and HD visual devices.
VRWM (max): 13V VBR(min): 14.4V VBR(max): 15.9V IR(max): 5µA VC(max): 21.5V Package: SMA
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