98 - Blogs - Shenzhen Slkor Micro Semicon Co., Ltd.

Why are AI developers so crazy? (II)

Only by moving forward In fact, whether it's ChatLaw, the large-scale legal model developed by Peking University, or WPS AI by Kingsoft, or even Baidu Wenxin Yiyu, an app with over a million downloads in 24 hours after its full release, these may a
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Why are AI developers so crazy? (I)

Just after midnight on August 31st, Baidu suddenly announced the opening of "Wenxin Yiyan" to the entire society. Judging from the timing of the announcement, Baidu must have worked overnight and carefully timed the release of this news.
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How did the era of NVIDIA come with the "airdrop" of ChatGPT? (II)

The exponential spread of ChatGPT ChatGPT was released by OpenAI on November 30, 2022, and quickly gained popularity worldwide. It reached 100 million active users in a record-breaking time, taking Facebook 54 months, X (old Twitter) 49 months, Instagr
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How did the era of NVIDIA come with the "airdrop" of ChatGPT? (I)

Ranking of semiconductor manufacturers based on sales revenue in Q2 2023 On August 14, 2023, Semiconductor Intelligence, a research firm in the United States, released the ranking of the top 15 semiconductor manufacturers in terms of sales revenue for
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The development background and advantages of SiC MOSFET power devices

The development background of SiC power devices We know that by applying SiC to power devices, low-loss power conversion can be achieved, which was not possible with traditional Si power devices. It is not difficult to see that this is a major reason f
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【Daily Highlight】SL27511 Single-Channel High-Speed Low-Side Gate Driver With 4-A Peak Source and 8-A Peak Sink

As a single-channel high-speed low-side grid driver with the peak sourcing current of 4A and the peak sinking current of 8A,SL27511 can drive MOSFET,IGBT and emerging broad-band gap power devices efficiently and safely. With characteristics of low propagation delay and compact SOT-23,it can achieve the MOSFET switching frequency of hundreds of kHz.The chip is applicable to synchronous rectification driving of servers and communication power supply.In this condition,the dead time of the synchronous tube MOSFET leads to direct influence on efficiency of the converter. The 4.5V to 20V wide ranges VDD supply voltage can drive MOSFET or GaN power devices effectively. The integrated UVLO protective function can ensure the output low level in abnormal conditions. The -5V to 24V independent input pin voltage ranges can ensure stable working in condition ofover-shoot caused by stray inductance. The voltage threshold value of the input pin is compatible to the TTL level input.
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Power semiconductor ushers in the era of SiC (III)

Driven by the increasing demand in the automotive terminal market and the price parity with silicon, the production of silicon carbide (SiC) is growing rapidly.
Thousands of power semiconductor modules have already been used in electric vehicles for on-board charging, traction inverters, and DC-to-DC conversion. Most of them are currently manufactured using silicon-based IGBTs. However, the shift to SiC-based MOSFETs has doubled power density and accelerated switching speed in smaller, lighter packages.
The requirements for high voltage and operation in hot and harsh environments are becoming increasingly demanding for electric vehicles and charging stations. However, due to the higher manufacturing and packaging costs of wide bandgap materials, it will take some time for silicon carbide (SiC) to gain a solid footing. Nevertheless, this situation is changing. Victor Veliadis, executive Director and Chief Technology Officer of PowerAmerica, stated that the prices of SiC power modules are now comparable to silicon-based modules, which in turn promotes supply partnerships and the construction of new SiC factories.
There is still much work to be done. SiC wafer technology needs to be upgraded. Manufacturing these devices requires 20% new process tools and 80% improved tools. Our goal is to accelerate the turnover speed of integrated and discrete power devices, which is why automotive manufacturers are turning to direct wafer-to-module collaboration with foundries.
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Power semiconductor ushers in the era of SiC (II)

Driven by the increasing demand in the automotive terminal market and the price parity with silicon, the production of silicon carbide (SiC) is growing rapidly.
Thousands of power semiconductor modules have already been used in electric vehicles for on-board charging, traction inverters, and DC-to-DC conversion. Most of them are currently manufactured using silicon-based IGBTs. However, the shift to SiC-based MOSFETs has doubled power density and accelerated switching speed in smaller, lighter packages.
The requirements for high voltage and operation in hot and harsh environments are becoming increasingly demanding for electric vehicles and charging stations. However, due to the higher manufacturing and packaging costs of wide bandgap materials, it will take some time for silicon carbide (SiC) to gain a solid footing. Nevertheless, this situation is changing. Victor Veliadis, executive Director and Chief Technology Officer of PowerAmerica, stated that the prices of SiC power modules are now comparable to silicon-based modules, which in turn promotes supply partnerships and the construction of new SiC factories.
There is still much work to be done. SiC wafer technology needs to be upgraded. Manufacturing these devices requires 20% new process tools and 80% improved tools. Our goal is to accelerate the turnover speed of integrated and discrete power devices, which is why automotive manufacturers are turning to direct wafer-to-module collaboration with foundries.
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Power semiconductor ushers in the era of SiC (I)

Driven by the increasing demand in the automotive terminal market and the price parity with silicon, the production of silicon carbide (SiC) is growing rapidly.
Thousands of power semiconductor modules have already been used in electric vehicles for on-board charging, traction inverters, and DC-to-DC conversion. Most of them are currently manufactured using silicon-based IGBTs. However, the shift to SiC-based MOSFETs has doubled power density and accelerated switching speed in smaller, lighter packages.
The requirements for high voltage and operation in hot and harsh environments are becoming increasingly demanding for electric vehicles and charging stations. However, due to the higher manufacturing and packaging costs of wide bandgap materials, it will take some time for silicon carbide (SiC) to gain a solid footing. Nevertheless, this situation is changing. Victor Veliadis, executive Director and Chief Technology Officer of PowerAmerica, stated that the prices of SiC power modules are now comparable to silicon-based modules, which in turn promotes supply partnerships and the construction of new SiC factories.
There is still much work to be done. SiC wafer technology needs to be upgraded. Manufacturing these devices requires 20% new process tools and 80% improved tools. Our goal is to accelerate the turnover speed of integrated and discrete power devices, which is why automotive manufacturers are turning to direct wafer-to-module collaboration with foundries.
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【Daily Highlight】SL4427 Dual Low Side Driver

The SL4427 is a dual 4A high-speed low-side gate driver that efficiently and safely drives MOSFETs as well as IGBTs.Available in SOP-8 packages with or without thermal pads, low propagation delays and mismatches allow MOSFETs to switch in the hundreds of kHz.This chip is very suitable for the synchronous rectification drive of server and communication power supplies, in which the dead time of the synchronous MOSFET directly affects the efficiency of the converter. The driver can increase the output drive current by paralleling two channels. When only one enable pin is enabled high (the other enable pin is floating), the outputs of both channels are driven by a phase-one logic signal This feature can greatly reduce the mismatch between the two channels and make it suitable for driving parallel switches.The driver's input thresholds are based on TTL levels up to 20V tolerance.
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