97 - Blogs - Shenzhen Slkor Micro Semicon Co., Ltd.

Power Module (IPM), IGBT, and Automotive Power Devices (I)

Power semiconductor devices play a significant role in modern power control and drive systems. IGBT modules and IPM modules are two of the most common types of devices used in these systems. They can be utilized for controlling high-power loads and driving motors, among other applications. However, they have different internal structures and functionalities. So, what exactly do IPM and IGBT modules refer to? Let's delve into their differences in detail.
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The structure and manufacturing process of Gallium Nitride (GaN) devices (III)

The characteristics of Gallium Nitride (GaN) power devices and silicon-based power devices are fundamentally different due to the difference in epitaxial structures. This article provides a thorough comparison between GaN HEMT (High Electron Mobility Transistor) and silicon-based MOS (Metal-Oxide-Semiconductor) transistors in terms of epitaxial structures. Furthermore, a comparison is made between enhancement-mode and depletion-mode GaN HEMT structures, summarizing the characteristics determined by the differences in structure.
Additionally, the epitaxial process for GaN power devices and the process for power device fabrication are described to enhance the understanding of GaN power device technology. Based on the understanding of the structure and process of GaN power devices, a comparison is made to explain the characteristics of different semiconductor materials and GaN HEMTs with different substrate materials.
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The structure and manufacturing process of Gallium Nitride (GaN) devices (II)

The characteristics of Gallium Nitride (GaN) power devices and silicon-based power devices are fundamentally different due to the difference in epitaxial structures. This article provides a thorough comparison between GaN HEMT (High Electron Mobility Transistor) and silicon-based MOS (Metal-Oxide-Semiconductor) transistors in terms of epitaxial structures. Furthermore, a comparison is made between enhancement-mode and depletion-mode GaN HEMT structures, summarizing the characteristics determined by the differences in structure.

Additionally, the epitaxial process for GaN power devices and the process for power device fabrication are described to enhance the understanding of GaN power device technology. Based on the understanding of the structure and process of GaN power devices, a comparison is made to explain the characteristics of different semiconductor materials and GaN HEMTs with different substrate materials.
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The structure and manufacturing process of Gallium Nitride (GaN) devices (I)

The characteristics of Gallium Nitride (GaN) power devices and silicon-based power devices are fundamentally different due to the difference in epitaxial structures. This article provides a thorough comparison between GaN HEMT (High Electron Mobility Transistor) and silicon-based MOS (Metal-Oxide-Semiconductor) transistors in terms of epitaxial structures. Furthermore, a comparison is made between enhancement-mode and depletion-mode GaN HEMT structures, summarizing the characteristics determined by the differences in structure.
Additionally, the epitaxial process for GaN power devices and the process for power device fabrication are described to enhance the understanding of GaN power device technology. Based on the understanding of the structure and process of GaN power devices, a comparison is made to explain the characteristics of different semiconductor materials and GaN HEMTs with different substrate materials.
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What should be done about the chip industry? (III)

Against the backdrop of serious global crises such as war, climate change, aging populations, and supply chain disruptions, coupled with the demand for better liquidity, reliable energy, and healthcare, the role of semiconductors on the world stage has never been more important. At this year's ITF World conference organized by imec in May, executives from leading companies worldwide shared their views on the future development of the semiconductor industry.
In this article, we summarize their insights into the main trends, challenges, and possible solutions for the semiconductor industry in the coming years.
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What should be done about the chip industry? (II)

Against the backdrop of serious global crises such as war, climate change, aging populations, and supply chain disruptions, coupled with the demand for better liquidity, reliable energy, and healthcare, the role of semiconductors on the world stage has never been more important. At this year's ITF World conference organized by imec in May, executives from leading companies worldwide shared their views on the future development of the semiconductor industry.
In this article, we summarize their insights into the main trends, challenges, and possible solutions for the semiconductor industry in the coming years.
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What should be done about the chip industry? (I)

Against the backdrop of serious global crises such as war, climate change, aging populations, and supply chain disruptions, coupled with the demand for better liquidity, reliable energy, and healthcare, the role of semiconductors on the world stage has never been more important. At this year's ITF World conference organized by imec in May, executives from leading companies worldwide shared their views on the future development of the semiconductor industry.
In this article, we summarize their insights into the main trends, challenges, and possible solutions for the semiconductor industry in the coming years.
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【Daily Highlight】1117-1.8 1A Lowdropout Voltage Regulator

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【Daily Highlight】SL27517 Single-channel Gate Driver

The SL27517 is a single-channel 4A high-speed low-side gate driver that efficiently and safely drives MOSFETs, IGBTs, and emerging wide-bandgap power devices. With characteristics of low propagation delay and compact SOT-23, it can achieve the MOSFET switching frequency of hundreds ofkHz.The chip is applicable to synchronous rectification driving of servers and communication power supply. In this condition,the dead time of the synchronous tube MOSFET leads to direct influence on efficiency of the converter. The 4.5V to 20V wide ranges VDD supply voltage can drive MOSFET or GaN power devices effectively.The integrated UVLO protective function can ensure the output low level in abnormal conditions. The -5V to 24V independent input pin voltage ranges can ensure stable working in condition ofover-shoot caused by stray inductance.The voltage threshold value of the input pin is compatible to the TTL level input.
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Why are AI developers so crazy? (III)

Epilogue Honestly speaking, I have also tried many AI applications myself, including many that claim to be artificial intelligence but are actually developed from artificial stupidity. For example, Midjourney initially couldn't draw pictures, bu
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