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SS520 Schottky Diode Rectifier SMA
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SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE 20 to 200 Volts
FORWARD CURRENT-5.0 Amperes
FEATURES
? Metal-Semiconductor junction with gardring
? Epitaxial construction
? Low forward voltage drop
? High current capability
? The plastic material carries UL recognition 94V-0
? For use in low vlotage, high frequency inverters,free wheeling, and polarity protection applications
MECHANICAL DATA
? Case: MoldedPlastic
? Polarity:Colorbanddenotescathode
? Weight:0.058grams
| File Name | Title | Description |
|---|---|---|
| SS52 SMA.pdf | SS52 SMA | - |
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Vr: 25V Io: 100mA Vf: 0.3V@1mA Ir: 2μA@15V
This diode features a peak reverse voltage rating (VRRM) of 200V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1V. Its fast reverse recovery time (trr) of just 50ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 400V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.3V. Its fast reverse recovery time (trr) of just 50ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 600V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.65V. Its fast reverse recovery time (trr) of just 75ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 1000V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.65V. Its fast reverse recovery time (trr) of just 75ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 200V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1V. Its fast reverse recovery time (trr) of just 50ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
