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Trench Power MV MOSFET technology
Excellent package for heat dissipation
High density cell design for low RDS(ON)
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS 100V
● ID 25A
● RDS(ON)( at VGS= 10V) ＜45mohm
General Description
● Trench Power MV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
Applications
● DC-DC Converters
● Power management functions
| File Name | Title | Description |
|---|---|---|
| SL25N10 TO-252.pdf | SL25N10 TO-252 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
Support
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Type: N-channel Vdss: 100V Id: 25A RDS(on)@Vgs,Id: 35mΩ@10V,15A Vgs(th)@Id: 1.8V@250μA Pd:34W
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
● Ultra Low Gate Charge cause lower driving requirements ● 100% Avalanche Tested ● ROHS compliant
● Ultra Low Gate Charge cause lower driving requirements ● 100%Avalanche Tested ● ROHS compliant
Fast switching 100% avalanche tested Improved dv/dt capability
100% Avalanche Tested Fast Switching Improved dv/dt Capability
Type: N-channel Vdss:650V Id: 8A RDS(on)@Vgs,Id: 550mΩ@10V,2.5A Vgs(th)@Id: 4.5V@250μA Pd: 69W
Ultra fast switching 100% avalanche tested Improved dv/dt capability
