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Static drain-source on-resistance: RDS(on)≤150m
Enhancement mode
Fast Switching Speed
Our advantages:
China's manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. Slkor semiconductor electronic components can fully replace those of major international brands in 99% of applications without the need for testing verification.
Slkor alternative equivalents for Infineon:
| Infineon | Slkor Replacements | ||
| Part Number | Part Number | Product Category | Package |
| IRF640NPBF | IRF640 | MOSFET | TO-220 |
| IRFR5305TRPBF | IRFR5305 | MOSFET | TO-252 |
| TLE4275 | SL4275 | LDO | TO-252 |
| TLE4284 | SL4284 | LDO | TO-252 |
| BCR401 | SL401 | Driver IC | SOT-23 |
Slkor IRF640 N-channel Power MOSFET
Feature
Static drain-source on-resistance: RDS(on)≤150m;
Enhancement mode;
Fast Switching Speed;
100% avalanche testedlMinimum Lot-to-Lot variations for robust device performance and reliable operation.
Description
Efficient and reliable device for use in a wide variety of applications.
| File Name | Title | Description |
|---|---|---|
| IRF640 TO-220.PDF | IRF640 TO-220 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Static drain-source on-resistance: RDS(on)≤150m; Enhancement mode; Fast Switching Speed;
● Ultra Low Gate Charge cause lower driving requirements ● 100% Avalanche Tested ● ROHS compliant
● Ultra Low Gate Charge cause lower driving requirements ● 100%Avalanche Tested ● ROHS compliant
Fast switching 100% avalanche tested Improved dv/dt capability
100% Avalanche Tested Fast Switching Improved dv/dt Capability
Type: N-channel Vdss:650V Id: 8A RDS(on)@Vgs,Id: 550mΩ@10V,2.5A Vgs(th)@Id: 4.5V@250μA Pd: 69W
Ultra fast switching 100% avalanche tested Improved dv/dt capability
High ruggedness Fast switching 100% avalanche tested
