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The MMBT2907 is a high-performance PNP bipolar junction transistor (BJT) known for its robust characteristics and versatile applications in electronics. Designed for efficiency and reliability, it offers a collector-emitter voltage (Vceo) of -40V and a maximum collector current (Ic) of -600mA. This makes it suitable for both low and medium power circuits where precise current control and signal amplification are critical. Encapsulated in a compact SOT-23 package, it facilitates easy integration into modern electronic designs.
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Description:
The MMBT2907 is a high-performance PNP bipolar junction transistor (BJT) known for its robust characteristics and versatile applications in electronics. Designed for efficiency and reliability, it offers a collector-emitter voltage (Vceo) of -40V and a maximum collector current (Ic) of -600mA. This makes it suitable for both low and medium power circuits where precise current control and signal amplification are critical. Encapsulated in a compact SOT-23 package, it facilitates easy integration into modern electronic designs.
Features:
● Epitaxial planar die construction
● Complementary NPN Type available(MMBT2222)
Applications:
The MMBT2907 transistor finds applications in various electronic circuits including:
| File Name | Title | Description |
|---|---|---|
| MMBT2907.pdf | MMBT2907 | - |
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