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The NPN Bipolar Transistor is housed in the SOT-23 package, which is designed for lower power surface mount applications.
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Slkor alternative equivalents to DIODES.
| DIODES | Slkor Replacements | ||
| Part Number | Part Number | Product Category | Package |
| SMAJ5.0A | SMAJ5.0A | TVS | SMA |
| SMAJ33CA-13-F | SMAJ33CA | TVS | SMA |
| BAT54C-7-F | BAT54C | Schottky Diodes | SOT-23 |
| TL431AS-13 | TL431 | Voltage References | SOT-23 |
| M8403DR-H | PAM8403 | Op Amps | SOP-16 |
| BC817-25Q-7-F | BC807-25 | Transistor | SOT-23 |
| BC817-40Q-7-F | BC817-40 | Transistor | SOT-23 |
| BAV99-13-F | BAV99 | Switching Diode | SOT-23 |
| BAV19W-7-F | BAV19W | Switching Diode | SOD-123 |
| BAV20W-7-F | BAV20W | Switching Diode | SOD-123 |
| BAV21W-7-F | BAV21W | Switching Diode | SOD-123 |
| SMBJ12A-13-F | SMBJ12A | TVS | SMB |
| SMBJ24CA-13-F | SMBJ24CA | TVS | SMB |
| SMAJ13CA-13-F | SMAJ13CA | TVS | SMA |
| SMAJ15CA-13-F | SMAJ15CA | TVS | SMA |
| SMAJ6.0A-13-F | SMAJ6.0A | TVS | SMA |
| US1M | US1M | Fast Recovery Diode | SMA |
| RS1M | RS1M | Switching Diode | SMA |
| MMBD4148-7-F | MMBD4148 | Switching Diode | SOT-23 |
Description
The NPN Bipolar Transistor is housed in the SOT-23 package, which is designed for lower power surface mount applications.
Features
● High current
● Three current gain selections
Applications
● Steering Logic
● Switching
● General-purpose switching and amplification
End Products
● Automotive Control Units
● Consumer Electronics
Quick reference data
| Symbol | Parameter | Conditions | Max | Unit |
| VCEO | collector-emitter voltage | open base | 45 | V |
| IC | collector current | 0.5 | A | |
| VCEsat |
collector-emitter saturation voltage |
IC = 500mA; IB = 50mA | 0.7 | V |
| File Name | Title | Description |
|---|---|---|
| BC817-40.pdf | BC817-40 | - |
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Vceo:40V Ic:2A Pd:300mW VCE(sat):0.5V fT:100MHz Working temperature:-
The 2SC2712-G is a high-performance NPN bipolar transistor housed in a compact SOT-23 package. It is designed for various electronic applications, offering reliable switching and amplification capabilities in a small footprint.
Introducing the 13001 NPN Bipolar Transistor, a robust and versatile component engineered for high-voltage and power applications. Encased in a compact SOT-23 package, this transistor offers a maximum collector-emitter voltage (Vceo) of 600V, accommodating demanding circuit requirements. With a collector current (Ic) capacity of up to 0.2A and a power dissipation rating of 0.75W, it ensures reliable operation in various settings. The 13001 features a low saturation voltage (VCE(sat)) of 0.5V and a transition frequency (fT) of 8MHz, making it suitable for both switching and amplification tasks.
The 2SC3585 is an ultra-high-frequency low-noise transistor using planar NPN silicon epitaxial bipolar technology. It features high power gain, low noise figure, wide dynamic range, and ideal current characteristics. It comes in a SOT-23-3L surface-mount package and is primarily used in VHF, UHF, and CATV high-frequency broadband low-noise amplifiers.
The 2SC3356 is an ultra-high frequency low-noise transistor utilizing planar NPN silicon epitaxial bipolar technology. It features high power gain, low noise figure, wide dynamic range, and excellent current characteristics.Packaged in SOT-23 SMD format, it is primarily used in VHF, UHF, and CATV broadband low-noise amplifiers.
This high-performance component boasts a Vceo rating of 45V and can handle a collector current (Ic) of up to 600mA, ensuring robust and reliable operation in various circuits. With a power dissipation capability of 300mW and a saturation voltage (VCE(sat)) of just 0.3V at 100mA collector current and 10mA base current, this transistor offers exceptional efficiency and low power loss.
The 2SD1782R NPN Bipolar Transistor SOT-23 designed to deliver exceptional reliability and efficiency in demanding electronic applications. With robust specifications and advanced technology, this transistor is engineered to handle high voltages and currents while maintaining optimal performance in extreme temperatures. Ideal for both high-frequency and power applications, it offers a balanced combination of power handling, switching speed, and thermal stability.
The MMBT1616AK NPN Bipolar Transistor designed to deliver exceptional efficiency and reliability for a wide range of electronic applications. With a collector-emitter voltage (Vceo) rating of 60V and a collector current (Ic) capability of 1A, this transistor is engineered to handle demanding tasks while maintaining optimal performance. The device boasts a power dissipation (Pd) of 350mW, ensuring robust operation even under significant loads. Featuring a low VCE(sat) of 0.3V at 1A and 50mA base current (Ib), this transistor offers minimal saturation voltage for improved power efficiency. Additionally, with a transition frequency (fT) of 100MHz, it is well-suited for high-frequency applications.
